| Mfr. #: | BFG93A/X,215 |
|---|---|
| Hersteller: | NXP Semiconductors |
| Beschreibung: | RF Bipolar Transistors Single NPN 12V 35mA 300mW 40 6GHz |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | BFG93A/X,215 Datenblatt |
Product belongs to the - series. Digi-ReelR is the packaging method for this product TO-253-4, TO-253AA Surface Mount mounting type Supplier device package: SOT-143B Transistor type: NPN Maximum current collector Ic is 35mA . Maximum collector-emitter breakdown voltage of 12V DC current gain minimum (hFE) of Ic/Vce at 40 @ 30mA, 5V. 1.7dB ~ 2.3dB @ 1GHz ~ 2GHz typical noise figure The device offers a - of 26dB.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BFG93A/X,215 Specifications
A: At what frequency does the Series?
Q: The product Series is -.
A: What is the Packaging of the product?
Q: The Packaging of the product is Digi-ReelR.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-253-4, TO-253AA.
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is SOT-143B.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed NPN
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 35mA.
A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?
Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 12V.
A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?
Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 40 @ 30mA, 5V
A: At what frequency does the Noise-Figure-dB-Typ-f?
Q: The product Noise-Figure-dB-Typ-f is 1.7dB ~ 2.3dB @ 1GHz ~ 2GHz.
A: Is the cutoff frequency of the product Gain?
Q: Yes, the product's Gain is indeed -