BFU520XAR

Mfr. #: BFU520XAR
Hersteller: NXP Semiconductors
Beschreibung: RF Bipolar Transistors Dual NPN wideband Silicon RFtransisto
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: BFU520XAR Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BFU520XAR Overview

Product belongs to the Automotive, AEC-Q101 series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style TO-253-4, TO-253AA Si is the technology used. Surface Mount mounting type Supplier device package: SOT-143B Configuration Dual Transistor type: NPN Maximum current collector Ic is 30mA . Maximum collector-emitter breakdown voltage of 12V DC current gain minimum (hFE) of Ic/Vce at 60 @ 5mA, 8V. 0.7dB @ 900MHz typical noise figure The device offers a 20dB of 26dB. Power-off control: 450 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 40 C The operating frequency is 900 MHz. Rated VCEO up to 16 V The transistor polarity is NPN. 2 V rating of 5 V Max DC collector current: 50 mA This product is capable of handling a 5 mA continuous collector current. Minimum hfe for DC collector-base gain is 60.

BFU520XAR Image

BFU520XAR

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BFU520XAR Specifications
  • Manufacturer NXP Semiconductors
  • Product Category Transistors - Bipolar (BJT) - RF
  • Series Automotive, AEC-Q101
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Package-Case TO-253-4, TO-253AA
  • Technology Si
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-143B
  • Configuration Dual
  • Power-Max 450mW
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 30mA
  • Voltage-Collector-Emitter-Breakdown-Max 12V
  • DC-Current-Gain-hFE-Min-Ic-Vce 60 @ 5mA, 8V
  • Frequency-Transition 10.5GHz
  • Noise-Figure-dB-Typ-f 0.7dB @ 900MHz
  • Gain 20dB
  • Pd-Power-Dissipation 450 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 40 C
  • Operating-Frequency 900 MHz
  • Collector-Emitter-Voltage-VCEO-Max 16 V
  • Transistor-Polarity NPN
  • Emitter-Base-Voltage-VEBO 2 V
  • Maximum-DC-Collector-Current 50 mA
  • Continuous-Collector-Current 5 mA
  • DC-Collector-Base-Gain-hfe-Min 60

BFU520XAR

BFU520XAR Specifications

BFU520XAR FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is Automotive, AEC-Q101.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-253-4, TO-253AA

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is SOT-143B.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Dual.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed NPN

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 30mA.

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 12V.

  • A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 60 @ 5mA, 8V.

  • A: At what frequency does the Noise-Figure-dB-Typ-f?

    Q: The product Noise-Figure-dB-Typ-f is 0.7dB @ 900MHz.

  • A: Is the cutoff frequency of the product Gain?

    Q: Yes, the product's Gain is indeed 20dB

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 450 mW

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 40 C

  • A: At what frequency does the Operating-Frequency?

    Q: The product Operating-Frequency is 900 MHz.

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 16 V

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is NPN.

  • A: At what frequency does the Emitter-Base-Voltage-VEBO?

    Q: The product Emitter-Base-Voltage-VEBO is 2 V.

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 50 mA.

  • A: What is the Continuous-Collector-Current of the product?

    Q: The Continuous-Collector-Current of the product is 5 mA.

  • A: What is the DC-Collector-Base-Gain-hfe-Min of the product?

    Q: The DC-Collector-Base-Gain-hfe-Min of the product is 60.

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