BFU530R

Mfr. #: BFU530R
Hersteller: NXP Semiconductors
Beschreibung: RF TRANS NPN 12V 11GHZ SOT143B
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: BFU530R Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BFU530R Overview

Product belongs to the Automotive, AEC-Q101 series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style TO-253-4, TO-253AA Si is the technology used. Surface Mount mounting type Supplier device package: SOT-143B Configuration Dual Transistor type: NPN Maximum current collector Ic is 40mA . Maximum collector-emitter breakdown voltage of 12V DC current gain minimum (hFE) of Ic/Vce at 60 @ 10mA, 8V. 0.6dB @ 900MHz typical noise figure The device offers a 21.5dB of 26dB. Power-off control: 450 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 40 C The operating frequency is 900 MHz. Rated VCEO up to 16 V The transistor polarity is NPN. 2 V rating of 5 V Max DC collector current: 65 mA This product is capable of handling a 10 mA continuous collector current. Minimum hfe for DC collector-base gain is 60.

BFU530R Image

BFU530R

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BFU530R Specifications
  • Manufacturer NXP Semiconductors
  • Product Category Transistors - Bipolar (BJT) - RF
  • Series Automotive, AEC-Q101
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Package-Case TO-253-4, TO-253AA
  • Technology Si
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-143B
  • Configuration Dual
  • Power-Max 450mW
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 40mA
  • Voltage-Collector-Emitter-Breakdown-Max 12V
  • DC-Current-Gain-hFE-Min-Ic-Vce 60 @ 10mA, 8V
  • Frequency-Transition 11GHz
  • Noise-Figure-dB-Typ-f 0.6dB @ 900MHz
  • Gain 21.5dB
  • Pd-Power-Dissipation 450 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 40 C
  • Operating-Frequency 900 MHz
  • Collector-Emitter-Voltage-VCEO-Max 16 V
  • Transistor-Polarity NPN
  • Emitter-Base-Voltage-VEBO 2 V
  • Maximum-DC-Collector-Current 65 mA
  • Continuous-Collector-Current 10 mA
  • DC-Collector-Base-Gain-hfe-Min 60

BFU530R

BFU530R Specifications

BFU530R FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed Automotive, AEC-Q101

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-253-4, TO-253AA

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is SOT-143B.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Dual.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed NPN

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 40mA

  • A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?

    Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 12V

  • A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 60 @ 10mA, 8V.

  • A: What is the Noise-Figure-dB-Typ-f of the product?

    Q: The Noise-Figure-dB-Typ-f of the product is 0.6dB @ 900MHz.

  • A: At what frequency does the Gain?

    Q: The product Gain is 21.5dB.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 450 mW

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 40 C.

  • A: Is the cutoff frequency of the product Operating-Frequency?

    Q: Yes, the product's Operating-Frequency is indeed 900 MHz

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 16 V.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is NPN.

  • A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?

    Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 2 V

  • A: At what frequency does the Maximum-DC-Collector-Current?

    Q: The product Maximum-DC-Collector-Current is 65 mA.

  • A: What is the Continuous-Collector-Current of the product?

    Q: The Continuous-Collector-Current of the product is 10 mA.

  • A: What is the DC-Collector-Base-Gain-hfe-Min of the product?

    Q: The DC-Collector-Base-Gain-hfe-Min of the product is 60.

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