BFU550AR

Mfr. #: BFU550AR
Hersteller: NXP Semiconductors
Beschreibung: RF Bipolar Transistors Dual NPN wideband Silicon RFtransisto
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: BFU550AR Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BFU550AR Overview

Product belongs to the Automotive, AEC-Q101 series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.000310 oz SMD/SMT Mounting-Style TO-236-3, SC-59, SOT-23-3 Si is the technology used. Surface Mount mounting type Supplier device package: SOT-23 (TO-236AB) Configuration Dual Transistor type: NPN Maximum current collector Ic is 50mA . Maximum collector-emitter breakdown voltage of 12V DC current gain minimum (hFE) of Ic/Vce at 60 @ 15mA, 8V. 0.6dB @ 900MHz typical noise figure The device offers a 18dB of 26dB. Power-off control: 450 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 40 C The operating frequency is 900 MHz. Rated VCEO up to 16 V The transistor polarity is NPN. 2 V rating of 5 V Max DC collector current: 80 mA This product is capable of handling a 15 mA continuous collector current. Minimum hfe for DC collector-base gain is 60.

BFU550AR Image

BFU550AR

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BFU550AR Specifications
  • Manufacturer NXP Semiconductors
  • Product Category Transistors - Bipolar (BJT) - RF
  • Series Automotive, AEC-Q101
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.000310 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-236-3, SC-59, SOT-23-3
  • Technology Si
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-23 (TO-236AB)
  • Configuration Dual
  • Power-Max 450mW
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 50mA
  • Voltage-Collector-Emitter-Breakdown-Max 12V
  • DC-Current-Gain-hFE-Min-Ic-Vce 60 @ 15mA, 8V
  • Frequency-Transition 11GHz
  • Noise-Figure-dB-Typ-f 0.6dB @ 900MHz
  • Gain 18dB
  • Pd-Power-Dissipation 450 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 40 C
  • Operating-Frequency 900 MHz
  • Collector-Emitter-Voltage-VCEO-Max 16 V
  • Transistor-Polarity NPN
  • Emitter-Base-Voltage-VEBO 2 V
  • Maximum-DC-Collector-Current 80 mA
  • Continuous-Collector-Current 15 mA
  • DC-Collector-Base-Gain-hfe-Min 60

BFU550AR

BFU550AR Specifications

BFU550AR FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is Automotive, AEC-Q101.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.000310 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-236-3, SC-59, SOT-23-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed SOT-23 (TO-236AB)

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Dual

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is NPN.

  • A: At what frequency does the Current-Collector-Ic-Max?

    Q: The product Current-Collector-Ic-Max is 50mA.

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 12V.

  • A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 60 @ 15mA, 8V.

  • A: At what frequency does the Noise-Figure-dB-Typ-f?

    Q: The product Noise-Figure-dB-Typ-f is 0.6dB @ 900MHz.

  • A: Is the cutoff frequency of the product Gain?

    Q: Yes, the product's Gain is indeed 18dB

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 450 mW

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 40 C.

  • A: What is the Operating-Frequency of the product?

    Q: The Operating-Frequency of the product is 900 MHz.

  • A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?

    Q: The product Collector-Emitter-Voltage-VCEO-Max is 16 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 2 V.

  • A: At what frequency does the Maximum-DC-Collector-Current?

    Q: The product Maximum-DC-Collector-Current is 80 mA.

  • A: At what frequency does the Continuous-Collector-Current?

    Q: The product Continuous-Collector-Current is 15 mA.

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 60.

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