BFU550XRR

Mfr. #: BFU550XRR
Hersteller: NXP Semiconductors
Beschreibung: RF Bipolar Transistors Dual NPN wideband Silicon RFtransisto
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: BFU550XRR Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BFU550XRR Overview

Product belongs to the Automotive, AEC-Q101 series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style SOT-143R Si is the technology used. Surface Mount mounting type Supplier device package: SOT-143R Configuration Dual Transistor type: NPN Maximum current collector Ic is 50mA . Maximum collector-emitter breakdown voltage of 12V DC current gain minimum (hFE) of Ic/Vce at 60 @ 15mA, 8V. 0.7dB @ 900MHz typical noise figure The device offers a 21.5dB of 26dB. Power-off control: 450 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 40 C The operating frequency is 900 MHz. Rated VCEO up to 16 V The transistor polarity is NPN. 2 V rating of 5 V Max DC collector current: 80 mA This product is capable of handling a 15 mA continuous collector current. Minimum hfe for DC collector-base gain is 60.

BFU550XRR Image

BFU550XRR

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BFU550XRR Specifications
  • Manufacturer NXP Semiconductors
  • Product Category Transistors - Bipolar (BJT) - RF
  • Series Automotive, AEC-Q101
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Package-Case SOT-143R
  • Technology Si
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-143R
  • Configuration Dual
  • Power-Max 450mW
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 50mA
  • Voltage-Collector-Emitter-Breakdown-Max 12V
  • DC-Current-Gain-hFE-Min-Ic-Vce 60 @ 15mA, 8V
  • Frequency-Transition 11GHz
  • Noise-Figure-dB-Typ-f 0.7dB @ 900MHz
  • Gain 21.5dB
  • Pd-Power-Dissipation 450 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 40 C
  • Operating-Frequency 900 MHz
  • Collector-Emitter-Voltage-VCEO-Max 16 V
  • Transistor-Polarity NPN
  • Emitter-Base-Voltage-VEBO 2 V
  • Maximum-DC-Collector-Current 80 mA
  • Continuous-Collector-Current 15 mA
  • DC-Collector-Base-Gain-hfe-Min 60

BFU550XRR

BFU550XRR Specifications

BFU550XRR FAQ
  • A: At what frequency does the Series?

    Q: The product Series is Automotive, AEC-Q101.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is SOT-143R.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is SOT-143R.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Dual.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is NPN.

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 50mA

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 12V.

  • A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 60 @ 15mA, 8V.

  • A: At what frequency does the Noise-Figure-dB-Typ-f?

    Q: The product Noise-Figure-dB-Typ-f is 0.7dB @ 900MHz.

  • A: Is the cutoff frequency of the product Gain?

    Q: Yes, the product's Gain is indeed 21.5dB

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 450 mW.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 40 C

  • A: What is the Operating-Frequency of the product?

    Q: The Operating-Frequency of the product is 900 MHz.

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 16 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?

    Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 2 V

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 80 mA.

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 15 mA

  • A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

    Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 60

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