| Mfr. #: | BUL1102EFP |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | Bipolar Transistors - BJT IGBT & Power Bipola |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | BUL1102EFP Datenblatt |
Product belongs to the BUL1102E series. Tube is the packaging method for this product Weight of 0.090478 oz Through Hole Mounting-Style TO-220-3 Full Pack Through Hole mounting type Supplier device package: TO-220 Full Pack Configuration Single Transistor type: NPN Maximum current collector Ic is 4A . Maximum collector-emitter breakdown voltage of 450V DC current gain minimum (hFE) of Ic/Vce at 12 @ 2A, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.5V @ 400mA, 2A Power-off control: 30 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 450 V The transistor polarity is NPN. 12 V rating of 5 V Max DC collector current: 4 A This product is capable of handling a 4 A continuous collector current. Minimum hfe for DC collector-base gain is 35 at 250 mA at 5 V 12 at 2 A at 5 V.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BUL1102EFP Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed BUL1102E
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.090478 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-220-3 Full Pack.
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Through Hole
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is TO-220 Full Pack.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is NPN.
A: What is the Current-Collector-Ic-Max of the product?
Q: The Current-Collector-Ic-Max of the product is 4A.
A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?
Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 450V.
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 12 @ 2A, 5V.
A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?
Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 1.5V @ 400mA, 2A
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 30 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 65 C.
A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?
Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 450 V
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is NPN.
A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?
Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 12 V
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 4 A.
A: What is the Continuous-Collector-Current of the product?
Q: The Continuous-Collector-Current of the product is 4 A.
A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?
Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 35 at 250 mA at 5 V 12 at 2 A at 5 V