| Mfr. #: | BUL1203E |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | Bipolar Transistors - BJT N Ch 75V 3.5m 120A Pwr MOSFET |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | BUL1203E Datenblatt |
Product belongs to the BUL1203E series. Tube is the packaging method for this product Weight of 0.081130 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220AB Configuration Single Transistor type: NPN Maximum current collector Ic is 5A . Maximum collector-emitter breakdown voltage of 550V DC current gain minimum (hFE) of Ic/Vce at 9 @ 2A, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.5V @ 1A, 3A Power-off control: 100000 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 550 V The transistor polarity is NPN. The 1.2 kV voltage rating is 40 V. 9 V rating of 5 V Max DC collector current: 5 A Minimum hfe for DC collector-base gain is 10.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BUL1203E Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed BUL1203E
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.081130 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-220-3.
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is TO-220AB.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is NPN.
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 5A.
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 550V
A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?
Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 9 @ 2A, 5V
A: At what frequency does the Vce-Saturation-Max-Ib-Ic?
Q: The product Vce-Saturation-Max-Ib-Ic is 1.5V @ 1A, 3A.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 100000 mW.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 65 C.
A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?
Q: The product Collector-Emitter-Voltage-VCEO-Max is 550 V.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is NPN.
A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?
Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 1.2 kV
A: What is the Emitter-Base-Voltage-VEBO of the product?
Q: The Emitter-Base-Voltage-VEBO of the product is 9 V.
A: At what frequency does the Maximum-DC-Collector-Current?
Q: The product Maximum-DC-Collector-Current is 5 A.
A: What is the DC-Collector-Base-Gain-hfe-Min of the product?
Q: The DC-Collector-Base-Gain-hfe-Min of the product is 10.