| Mfr. #: | BUL58D |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | Bipolar Transistors - BJT Hi Vltg Fast Swtchng NPN Pwr Transisto |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | BUL58D Datenblatt |


Product belongs to the 500V Transistors series. Tube is the packaging method for this product Weight of 0.081130 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220 Transistor type: NPN Maximum current collector Ic is 8A . Maximum collector-emitter breakdown voltage of 450V DC current gain minimum (hFE) of Ic/Vce at 5 @ 5A, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 2V @ 1A, 5A Power-off control: 85000 mW Maximum operating temperature of + 150 C Rated VCEO up to 450 V The transistor polarity is NPN. 9 V rating of 5 V Max DC collector current: 8 A Minimum hfe for DC collector-base gain is 5.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BUL58D Specifications
A: At what frequency does the Series?
Q: The product Series is 500V Transistors.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.081130 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-220-3.
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed TO-220
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed NPN
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 8A.
A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?
Q: The product Voltage-Collector-Emitter-Breakdown-Max is 450V.
A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?
Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 5 @ 5A, 5V.
A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?
Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 2V @ 1A, 5A
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 85000 mW.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?
Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 450 V.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed NPN
A: At what frequency does the Emitter-Base-Voltage-VEBO?
Q: The product Emitter-Base-Voltage-VEBO is 9 V.
A: At what frequency does the Maximum-DC-Collector-Current?
Q: The product Maximum-DC-Collector-Current is 8 A.
A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?
Q: The product DC-Collector-Base-Gain-hfe-Min is 5.