CSD13306WT

CSD13306WT Overview

Product belongs to the CSD13306W series. Reel is the packaging method for this product Weight of 0.000060 oz SMD/SMT Mounting-Style Trade name: NexFET. DSBGA-6 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 1.9 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 8 ns of 16 ns. This product has a 11 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 3.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 12 V. This product has a 700 mV Vgs-th gate-source threshold voltage for efficient power management. The 15.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 20 ns This product has a 7 ns. Qg-Gate-Charge is 8.6 nC. This product features a 15 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD13306WT Image

CSD13306WT Specifications

• Manufacturer Texas Instruments
• Product Category Transistors - FETs, MOSFETs - Single
• Series CSD13306W
• Packaging Reel
• Unit-Weight 0.000060 oz
• Mounting-Style SMD/SMT
• Tradename NexFET
• Package-Case DSBGA-6
• Technology Si
• Number-of-Channels 1 Channel
• Configuration Single
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 1.9 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 8 ns
• Rise-Time 11 ns
• Vgs-Gate-Source-Voltage 10 V
• Id-Continuous-Drain-Current 3.5 A
• Vds-Drain-Source-Breakdown-Voltage 12 V
• Vgs-th-Gate-Source-Threshold-Voltage 700 mV
• Rds-On-Drain-Source-Resistance 15.5 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 20 ns
• Typical-Turn-On-Delay-Time 7 ns
• Qg-Gate-Charge 8.6 nC
• Forward-Transconductance-Min 15 S
• Channel-Mode Enhancement

CSD13306WT FAQ

• A: What is the Series of the product?

  Q: The Series of the product is CSD13306W.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Reel

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.000060 oz

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed SMD/SMT

• A: At what frequency does the Tradename?

  Q: The product Tradename is NexFET.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is DSBGA-6.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 1.9 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 8 ns

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 11 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 10 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 3.5 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 12 V.

• A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

  Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 700 mV

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 15.5 mOhms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 20 ns.

• A: At what frequency does the Typical-Turn-On-Delay-Time?

  Q: The product Typical-Turn-On-Delay-Time is 7 ns.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 8.6 nC

• A: Is the cutoff frequency of the product Forward-Transconductance-Min?

  Q: Yes, the product's Forward-Transconductance-Min is indeed 15 S

• A: At what frequency does the Channel-Mode?

  Q: The product Channel-Mode is Enhancement.