| Mfr. #: | CSD13381F4 |
|---|---|
| Hersteller: | Texas Instruments |
| Beschreibung: | MOSFET N-CH 12V 2.1A 3PICOSTAR |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | CSD13381F4 Datenblatt |
Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 3-XFDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 3-PICOSTAR Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 12V This product has an 200pF @ 6V value of 300pF @ 25V. This product's Standard. 2.1A (Ta) continuous drain-ID current at 25°C; This product has an 180 mOhm @ 500mA, 4.5V of 12 Ohm @ 150mA, 0V. Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3.8 ns of 16 ns. This product has a 1.5 ns of 16 ns. This product's 8 V. The ID of continuous drain current is 7 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 12 V. This product has a 850 mV Vgs-th gate-source threshold voltage for efficient power management. The 180 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11 ns This product has a 3.7 ns. Qg-Gate-Charge is 1.06 nC.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD13381F4 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed NexFET
A: What is the Packaging of the product?
Q: The Packaging of the product is Digi-ReelR Alternate Packaging.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: Is the cutoff frequency of the product Tradename?
Q: Yes, the product's Tradename is indeed NexFET
A: What is the Package-Case of the product?
Q: The Package-Case of the product is 3-XFDFN.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Operating-Temperature?
Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed 3-PICOSTAR
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: At what frequency does the FET-Type?
Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel.
A: What is the Drain-to-Source-Voltage-Vdss of the product?
Q: The Drain-to-Source-Voltage-Vdss of the product is 12V.
A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?
Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 200pF @ 6V
A: What is the FET-Feature of the product?
Q: The FET-Feature of the product is Standard.
A: What is the Current-Continuous-Drain-Id-25°C of the product?
Q: The Current-Continuous-Drain-Id-25°C of the product is 2.1A (Ta).
A: What is the Rds-On-Max-Id-Vgs of the product?
Q: The Rds-On-Max-Id-Vgs of the product is 180 mOhm @ 500mA, 4.5V.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 500 mW.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 3.8 ns
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 1.5 ns.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 8 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 7 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 12 V
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 850 mV
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 180 mOhms
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 11 ns
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 3.7 ns.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 1.06 nC.