| Mfr. #: | CSD16340Q3 |
|---|---|
| Hersteller: | Texas Instruments |
| Beschreibung: | MOSFET N-CH 25V 60A 8SON |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | CSD16340Q3 Datenblatt |
Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerTDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 8-VSON (3.3x3.3) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 25V This product has an 1350pF @ 12.5V value of 300pF @ 25V. This product's Logic Level Gate. 21A (Ta), 60A (Tc) continuous drain-ID current at 25°C; This product has an 4.5 mOhm @ 20A, 8V of 12 Ohm @ 150mA, 0V. Power-off control: 3 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 5.2 ns of 16 ns. This product has a 16.1 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 21 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V. This product has a 850 mV Vgs-th gate-source threshold voltage for efficient power management. The 4.3 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 13.8 ns This product has a 4.8 ns. Qg-Gate-Charge is 6.5 nC. This product features a 121 S of 500 S for high performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD16340Q3 Specifications
A: What is the Series of the product?
Q: The Series of the product is NexFET.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: At what frequency does the Tradename?
Q: The product Tradename is NexFET.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is 8-PowerTDFN.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: What is the Operating-Temperature of the product?
Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is 8-VSON (3.3x3.3).
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: Is the cutoff frequency of the product FET-Type?
Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: What is the Drain-to-Source-Voltage-Vdss of the product?
Q: The Drain-to-Source-Voltage-Vdss of the product is 25V.
A: At what frequency does the Input-Capacitance-Ciss-Vds?
Q: The product Input-Capacitance-Ciss-Vds is 1350pF @ 12.5V.
A: What is the FET-Feature of the product?
Q: The FET-Feature of the product is Logic Level Gate.
A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?
Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 21A (Ta), 60A (Tc)
A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?
Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 4.5 mOhm @ 20A, 8V
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 3 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 5.2 ns
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 16.1 ns
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 10 V
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 21 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 25 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 850 mV.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 4.3 mOhms
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 13.8 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 4.8 ns.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 6.5 nC.
A: At what frequency does the Forward-Transconductance-Min?
Q: The product Forward-Transconductance-Min is 121 S.