CSD16410Q5A

Mfr. #: CSD16410Q5A
Hersteller: Texas Instruments
Beschreibung: Trans MOSFET N-CH 25V 16A 8-Pin VSONP EP T/R
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: CSD16410Q5A Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD16410Q5A Overview

Product belongs to the CSD16410Q5A series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. VSON-FET-8 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 3 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3.6 ns of 16 ns. This product has a 10.7 ns of 16 ns. This product's 16 V. The ID of continuous drain current is 16 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V. This product has a 1.9 V Vgs-th gate-source threshold voltage for efficient power management. The 12 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 6.5 ns This product has a 6.2 ns. Qg-Gate-Charge is 3.9 nC. This product features a 38 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD16410Q5A Image

CSD16410Q5A

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD16410Q5A Specifications
  • Manufacturer TI
  • Product Category FETs - Single
  • Series CSD16410Q5A
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case VSON-FET-8
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 3 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 3.6 ns
  • Rise-Time 10.7 ns
  • Vgs-Gate-Source-Voltage 16 V
  • Id-Continuous-Drain-Current 16 A
  • Vds-Drain-Source-Breakdown-Voltage 25 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.9 V
  • Rds-On-Drain-Source-Resistance 12 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 6.5 ns
  • Typical-Turn-On-Delay-Time 6.2 ns
  • Qg-Gate-Charge 3.9 nC
  • Forward-Transconductance-Min 38 S
  • Channel-Mode Enhancement

CSD16410Q5A

CSD16410Q5A Specifications

CSD16410Q5A FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed CSD16410Q5A

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Reel

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is VSON-FET-8.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 3 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 3.6 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 10.7 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 16 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 16 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 25 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 1.9 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 12 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 6.5 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 6.2 ns

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 3.9 nC.

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 38 S

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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