CSD17309Q3

Mfr. #: CSD17309Q3
Hersteller: Texas Instruments
Beschreibung: MOSFET N-CH 30V 60A 8SON
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: CSD17309Q3 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD17309Q3 Overview

Product belongs to the CSD17309Q3 series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. VSON-Clip-8 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 2.8 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3.6 ns of 16 ns. This product has a 9.9 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 20 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 1.2 V Vgs-th gate-source threshold voltage for efficient power management. The 6.3 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 7.5 nC.

CSD17309Q3 Image

CSD17309Q3

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD17309Q3 Specifications
  • Manufacturer TI
  • Product Category FETs - Single
  • Series CSD17309Q3
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case VSON-Clip-8
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 2.8 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 3.6 ns
  • Rise-Time 9.9 ns
  • Vgs-Gate-Source-Voltage 10 V
  • Id-Continuous-Drain-Current 20 A
  • Vds-Drain-Source-Breakdown-Voltage 30 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.2 V
  • Rds-On-Drain-Source-Resistance 6.3 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 7.5 nC

CSD17309Q3

CSD17309Q3 Specifications

CSD17309Q3 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is CSD17309Q3.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is VSON-Clip-8.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 2.8 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 3.6 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 9.9 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 10 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 20 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 30 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 1.2 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 6.3 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 7.5 nC

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