CSD17507Q5A

CSD17507Q5A Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerTDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 8-VSON (5x6) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 30V This product has an 530pF @ 15V value of 300pF @ 25V. This product's Standard. 13A (Ta), 65A (Tc) continuous drain-ID current at 25°C; This product has an 10.8 mOhm @ 11A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 3 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 20 V. The ID of continuous drain current is 13 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 1.6 V Vgs-th gate-source threshold voltage for efficient power management. The 11.8 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 2.8 nC. This product features a 16 S of 500 S for high performance.

CSD17507Q5A Image

CSD17507Q5A Specifications

• Manufacturer Texas Instruments
• Product Category FETs - Single
• Series NexFET
• Packaging Digi-ReelR Alternate Packaging
• Mounting-Style SMD/SMT
• Tradename NexFET
• Package-Case 8-PowerTDFN
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 1 Channel
• Supplier-Device-Package 8-VSON (5x6)
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 3W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 30V
• Input-Capacitance-Ciss-Vds 530pF @ 15V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 13A (Ta), 65A (Tc)
• Rds-On-Max-Id-Vgs 10.8 mOhm @ 11A, 10V
• Vgs-th-Max-Id 2.1V @ 250μA
• Gate-Charge-Qg-Vgs 3.6nC @ 4.5V
• Pd-Power-Dissipation 3 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 13 A
• Vds-Drain-Source-Breakdown-Voltage 30 V
• Vgs-th-Gate-Source-Threshold-Voltage 1.6 V
• Rds-On-Drain-Source-Resistance 11.8 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 2.8 nC
• Forward-Transconductance-Min 16 S

CSD17507Q5A FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed NexFET

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is SMD/SMT.

• A: What is the Tradename of the product?

  Q: The Tradename of the product is NexFET.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed 8-PowerTDFN

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: What is the Operating-Temperature of the product?

  Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Surface Mount.

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: What is the Supplier-Device-Package of the product?

  Q: The Supplier-Device-Package of the product is 8-VSON (5x6).

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

• A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

  Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 30V

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 530pF @ 15V.

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Standard.

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 13A (Ta), 65A (Tc).

• A: At what frequency does the Rds-On-Max-Id-Vgs?

  Q: The product Rds-On-Max-Id-Vgs is 10.8 mOhm @ 11A, 10V.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 3 W

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 13 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 30 V.

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 1.6 V.

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 11.8 mOhms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 2.8 nC.

• A: Is the cutoff frequency of the product Forward-Transconductance-Min?

  Q: Yes, the product's Forward-Transconductance-Min is indeed 16 S