| Mfr. #: | CSD17552Q3A |
|---|---|
| Hersteller: | Texas Instruments |
| Beschreibung: | MOSFET N-CH 30V 15A 8SON |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | CSD17552Q3A Datenblatt |


Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerVDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 8-SON (3.3x3.3) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 30V This product has an 2050pF @ 15V value of 300pF @ 25V. This product's Standard. 15A (Ta), 60A (Tc) continuous drain-ID current at 25°C; This product has an 6 mOhm @ 11A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 2.6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3.4 ns of 16 ns. This product has a 7.4 nS of 16 ns. This product's 20 V. The ID of continuous drain current is 60 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 1.5 V Vgs-th gate-source threshold voltage for efficient power management. The 8.1 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11 ns This product has a 7.2 ns. Qg-Gate-Charge is 9 nC. This product features a 106 S of 500 S for high performance.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD17552Q3A Specifications
A: What is the Series of the product?
Q: The Series of the product is NexFET.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: What is the Tradename of the product?
Q: The Tradename of the product is NexFET.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed 8-PowerVDFN
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: At what frequency does the Operating-Temperature?
Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed 8-SON (3.3x3.3)
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: What is the FET-Type of the product?
Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 1 N-Channel
A: What is the Drain-to-Source-Voltage-Vdss of the product?
Q: The Drain-to-Source-Voltage-Vdss of the product is 30V.
A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?
Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 2050pF @ 15V
A: At what frequency does the FET-Feature?
Q: The product FET-Feature is Standard.
A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?
Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 15A (Ta), 60A (Tc)
A: At what frequency does the Rds-On-Max-Id-Vgs?
Q: The product Rds-On-Max-Id-Vgs is 6 mOhm @ 11A, 10V.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 2.6 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 3.4 ns.
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 7.4 nS.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 20 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 60 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 30 V
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 1.5 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 8.1 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: What is the Typical-Turn-Off-Delay-Time of the product?
Q: The Typical-Turn-Off-Delay-Time of the product is 11 ns.
A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?
Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 7.2 ns
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 9 nC.
A: Is the cutoff frequency of the product Forward-Transconductance-Min?
Q: Yes, the product's Forward-Transconductance-Min is indeed 106 S