CSD17579Q3AT

Mfr. #: CSD17579Q3AT
Hersteller: Texas Instruments
Beschreibung: IGBT Transistors MOSFET 30V NCh NexFET Pwr MOSFET
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: CSD17579Q3AT Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD17579Q3AT Overview

Product belongs to the CSD17579Q3A series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. VSONP-8 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 29 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 1 ns of 16 ns. This product has a 5 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 39 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 1.5 V Vgs-th gate-source threshold voltage for efficient power management. The 11.8 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11 ns This product has a 2 ns. Qg-Gate-Charge is 5.3 nC. This product features a 37 S of 500 S for high performance.

CSD17579Q3AT Image

CSD17579Q3AT

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD17579Q3AT Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD17579Q3A
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case VSONP-8
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 29 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 1 ns
  • Rise-Time 5 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 39 A
  • Vds-Drain-Source-Breakdown-Voltage 30 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.5 V
  • Rds-On-Drain-Source-Resistance 11.8 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 11 ns
  • Typical-Turn-On-Delay-Time 2 ns
  • Qg-Gate-Charge 5.3 nC
  • Forward-Transconductance-Min 37 S

CSD17579Q3AT

CSD17579Q3AT Specifications

CSD17579Q3AT FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is CSD17579Q3A.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed VSONP-8

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 29 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 1 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 5 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 39 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 30 V

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 1.5 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 11.8 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 11 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 2 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 5.3 nC.

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 37 S

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100
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25,65 $
500
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121,15 $
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