CSD18537NQ5AT

Mfr. #: CSD18537NQ5AT
Hersteller: Texas Instruments
Beschreibung: MOSFET N-CH 60V 50A 8SON
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: CSD18537NQ5AT Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD18537NQ5AT Overview

Product belongs to the CSD18537NQ5A series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. VSON-FET-8 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 3.2 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3.2 ns of 16 ns. This product has a 4 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 62 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 13 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 14.4 ns This product has a 5.8 ns. Qg-Gate-Charge is 14 nC. This product features a 62 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD18537NQ5AT Image

CSD18537NQ5AT

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD18537NQ5AT Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD18537NQ5A
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case VSON-FET-8
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 3.2 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 3.2 ns
  • Rise-Time 4 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 62 A
  • Vds-Drain-Source-Breakdown-Voltage 60 V
  • Vgs-th-Gate-Source-Threshold-Voltage 3 V
  • Rds-On-Drain-Source-Resistance 13 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 14.4 ns
  • Typical-Turn-On-Delay-Time 5.8 ns
  • Qg-Gate-Charge 14 nC
  • Forward-Transconductance-Min 62 S
  • Channel-Mode Enhancement

CSD18537NQ5AT

CSD18537NQ5AT Specifications

CSD18537NQ5AT FAQ
  • A: At what frequency does the Series?

    Q: The product Series is CSD18537NQ5A.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed VSON-FET-8

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 3.2 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 3.2 ns

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 4 ns

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 62 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 60 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 3 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 13 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 14.4 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 5.8 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 14 nC.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 62 S.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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