CSD19503KCS

CSD19503KCS Overview

Product belongs to the CSD19503KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 188 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 2 ns of 16 ns. This product has a 3 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 94 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. This product has a 2.8 V Vgs-th gate-source threshold voltage for efficient power management. The 8.8 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11 ns This product has a 7 ns. Qg-Gate-Charge is 28 nC. This product features a 110 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD19503KCS Image

CSD19503KCS Specifications

• Manufacturer Texas Instruments
• Product Category Transistors - FETs, MOSFETs - Single
• Series CSD19503KCS
• Packaging Tube
• Unit-Weight 0.211644 oz
• Mounting-Style Through Hole
• Tradename NexFET
• Package-Case TO-220-3
• Technology Si
• Number-of-Channels 1 Channel
• Configuration Single
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 188 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 2 ns
• Rise-Time 3 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 94 A
• Vds-Drain-Source-Breakdown-Voltage 80 V
• Vgs-th-Gate-Source-Threshold-Voltage 2.8 V
• Rds-On-Drain-Source-Resistance 8.8 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 11 ns
• Typical-Turn-On-Delay-Time 7 ns
• Qg-Gate-Charge 28 nC
• Forward-Transconductance-Min 110 S
• Channel-Mode Enhancement

CSD19503KCS FAQ

• A: What is the Series of the product?

  Q: The Series of the product is CSD19503KCS.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.211644 oz

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: Is the cutoff frequency of the product Tradename?

  Q: Yes, the product's Tradename is indeed NexFET

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-220-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 188 W

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 2 ns

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 3 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 94 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 80 V

• A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

  Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 2.8 V

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 8.8 mOhms

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 11 ns.

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 7 ns

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 28 nC.

• A: Is the cutoff frequency of the product Forward-Transconductance-Min?

  Q: Yes, the product's Forward-Transconductance-Min is indeed 110 S

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.