CSD87333Q3D

CSD87333Q3D Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerTDFN Si is the technology used. Operational temperature range: 125°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-VSON (3.3x3.3) This product uses an 2 N-Channel (Dual) Asymmetrical FET-Type transistor. Transistor type: 2 N-Channel 30V This product has an 662pF @ 15V value of 300pF @ 25V. This product's Logic Level Gate, 5V Drive. 15A continuous drain-ID current at 25°C; This product has an 14.3 mOhm @ 4A, 8V of 12 Ohm @ 150mA, 0V. Power-off control: 6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 2.2 ns of 16 ns. This product has a 3.9 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 15 A 15 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V 30 V. This product has a 1.2 V Vgs-th gate-source threshold voltage for efficient power management. The 13.4 mOhms 13.4 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 4.6 nC. This product features a 43 S of 500 S for high performance.

CSD87333Q3D Image

CSD87333Q3D Specifications

• Manufacturer LSSJ 品牌
• Product Category FETs - Arrays
• Series NexFET
• Packaging Digi-ReelR Alternate Packaging
• Mounting-Style SMD/SMT
• Tradename NexFET
• Package-Case 8-PowerTDFN
• Technology Si
• Operating-Temperature 125°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 2 Channel
• Supplier-Device-Package 8-VSON (3.3x3.3)
• FET-Type 2 N-Channel (Dual) Asymmetrical
• Power-Max 6W
• Transistor-Type 2 N-Channel
• Drain-to-Source-Voltage-Vdss 30V
• Input-Capacitance-Ciss-Vds 662pF @ 15V
• FET-Feature Logic Level Gate, 5V Drive
• Current-Continuous-Drain-Id-25°C 15A
• Rds-On-Max-Id-Vgs 14.3 mOhm @ 4A, 8V
• Vgs-th-Max-Id 1.2V @ 250μA
• Gate-Charge-Qg-Vgs 4.6nC @ 4.5V
• Pd-Power-Dissipation 6 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 2.2 ns
• Rise-Time 3.9 ns
• Vgs-Gate-Source-Voltage 10 V
• Id-Continuous-Drain-Current 15 A 15 A
• Vds-Drain-Source-Breakdown-Voltage 30 V 30 V
• Vgs-th-Gate-Source-Threshold-Voltage 1.2 V
• Rds-On-Drain-Source-Resistance 13.4 mOhms 13.4 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 4.6 nC
• Forward-Transconductance-Min 43 S

CSD87333Q3D FAQ

• A: What is the Series of the product?

  Q: The Series of the product is NexFET.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed SMD/SMT

• A: Is the cutoff frequency of the product Tradename?

  Q: Yes, the product's Tradename is indeed NexFET

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is 8-PowerTDFN.

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed 125°C (TJ)

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Surface Mount.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 2 Channel.

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is 8-VSON (3.3x3.3).

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is 2 N-Channel (Dual) Asymmetrical.

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 2 N-Channel

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 30V.

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 662pF @ 15V.

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Logic Level Gate, 5V Drive.

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 15A.

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 14.3 mOhm @ 4A, 8V

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 6 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 2.2 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 3.9 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 10 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 15 A 15 A.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 30 V 30 V.

• A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

  Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 1.2 V

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 13.4 mOhms 13.4 mOhms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 4.6 nC

• A: Is the cutoff frequency of the product Forward-Transconductance-Min?

  Q: Yes, the product's Forward-Transconductance-Min is indeed 43 S