| Mfr. #: | CSD88537ND |
|---|---|
| Hersteller: | Texas Instruments |
| Beschreibung: | MOSFET 2N-CH 60V 15A 8SOIC |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | CSD88537ND Datenblatt |
Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.019048 oz SMD/SMT Mounting-Style Trade name: NexFET. 8-SOIC (0.154", 3.90mm Width) Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-SOIC Configuration Dual This product uses an 2 N-Channel (Dual) FET-Type transistor. Transistor type: 2 N-Channel 60V This product has an 1400pF @ 30V value of 300pF @ 25V. This product's Standard. 15A continuous drain-ID current at 25°C; This product has an 15 mOhm @ 8A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 2.1 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 19 ns of 16 ns. This product has a 15 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 16 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 12.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 14 nC. This product features a 42 S of 500 S for high performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD88537ND Specifications
A: At what frequency does the Series?
Q: The product Series is NexFET.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.019048 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: At what frequency does the Tradename?
Q: The product Tradename is NexFET.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is 8-SOIC (0.154", 3.90mm Width).
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Operating-Temperature?
Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 2 Channel.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed 8-SOIC
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Dual
A: Is the cutoff frequency of the product FET-Type?
Q: Yes, the product's FET-Type is indeed 2 N-Channel (Dual)
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 2 N-Channel
A: What is the Drain-to-Source-Voltage-Vdss of the product?
Q: The Drain-to-Source-Voltage-Vdss of the product is 60V.
A: What is the Input-Capacitance-Ciss-Vds of the product?
Q: The Input-Capacitance-Ciss-Vds of the product is 1400pF @ 30V.
A: Is the cutoff frequency of the product FET-Feature?
Q: Yes, the product's FET-Feature is indeed Standard
A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?
Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 15A
A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?
Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 15 mOhm @ 8A, 10V
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 2.1 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 19 ns
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 15 ns
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 20 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 16 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 60 V
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 3 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 12.5 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 14 nC.
A: Is the cutoff frequency of the product Forward-Transconductance-Min?
Q: Yes, the product's Forward-Transconductance-Min is indeed 42 S