DN2625DK6-G

DN2625DK6-G Overview

Product belongs to the - series. Tray is the packaging method for this product Weight of 0.001319 oz SMD/SMT Mounting-Style 8-VDFN Exposed Pad Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-DFN (5x5) Configuration Dual This product uses an 2 N-Channel (Dual) FET-Type transistor. Transistor type: 2 N-Channel 250V This product has an 1000pF @ 25V value of 300pF @ 25V. This product's Depletion Mode. 1.1A continuous drain-ID current at 25°C; This product has an 3.5 Ohm @ 1A, 0V of 12 Ohm @ 150mA, 0V. Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 20 ns of 16 ns. This product has a 20 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 1.1 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 250 V. The 3.5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 10 ns This product has a 10 ns. Qg-Gate-Charge is 7.04 nC. This product operates in Depletion channel mode for optimal performance.

DN2625DK6-G Image

DN2625DK6-G Specifications

• Manufacturer Microchip Technology
• Product Category FETs - Arrays
• Series -
• Packaging Tray
• Unit-Weight 0.001319 oz
• Mounting-Style SMD/SMT
• Package-Case 8-VDFN Exposed Pad
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 2 Channel
• Supplier-Device-Package 8-DFN (5x5)
• Configuration Dual
• FET-Type 2 N-Channel (Dual)
• Power-Max -
• Transistor-Type 2 N-Channel
• Drain-to-Source-Voltage-Vdss 250V
• Input-Capacitance-Ciss-Vds 1000pF @ 25V
• FET-Feature Depletion Mode
• Current-Continuous-Drain-Id-25°C 1.1A
• Rds-On-Max-Id-Vgs 3.5 Ohm @ 1A, 0V
• Vgs-th-Max-Id -
• Gate-Charge-Qg-Vgs 7.04nC @ 1.5V
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 20 ns
• Rise-Time 20 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 1.1 A
• Vds-Drain-Source-Breakdown-Voltage 250 V
• Rds-On-Drain-Source-Resistance 3.5 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 10 ns
• Typical-Turn-On-Delay-Time 10 ns
• Qg-Gate-Charge 7.04 nC
• Channel-Mode Depletion

DN2625DK6-G FAQ

• A: At what frequency does the Series?

  Q: The product Series is -.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tray.

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.001319 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed SMD/SMT

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is 8-VDFN Exposed Pad.

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Surface Mount.

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 2 Channel.

• A: Is the cutoff frequency of the product Supplier-Device-Package?

  Q: Yes, the product's Supplier-Device-Package is indeed 8-DFN (5x5)

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Dual.

• A: At what frequency does the FET-Type?

  Q: The product FET-Type is 2 N-Channel (Dual).

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 2 N-Channel.

• A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

  Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 250V

• A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

  Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 1000pF @ 25V

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Depletion Mode.

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 1.1A.

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 3.5 Ohm @ 1A, 0V.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 20 ns

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 20 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 1.1 A.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 250 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 3.5 Ohms

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 10 ns.

• A: At what frequency does the Typical-Turn-On-Delay-Time?

  Q: The product Typical-Turn-On-Delay-Time is 10 ns.

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 7.04 nC.

• A: At what frequency does the Channel-Mode?

  Q: The product Channel-Mode is Depletion.