IRF820

IRF820 Overview

Product belongs to the IRF/SIHF820 series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 50 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 16 ns of 16 ns. This product has a 8.6 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 2.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 500 V. The 3 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 33 ns This product has a 8 ns. This product operates in Enhancement channel mode for optimal performance.

IRF820 Image

IRF820 Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series IRF/SIHF820
• Packaging Tube
• Unit-Weight 0.211644 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Number-of-Channels 1 Channel
• Configuration Single
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 50 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 16 ns
• Rise-Time 8.6 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 2.5 A
• Vds-Drain-Source-Breakdown-Voltage 500 V
• Rds-On-Drain-Source-Resistance 3 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 33 ns
• Typical-Turn-On-Delay-Time 8 ns
• Channel-Mode Enhancement

IRF820 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is IRF/SIHF820.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.211644 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-220-3

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 50 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 16 ns.

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 8.6 ns

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 20 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 2.5 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 500 V

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 3 Ohms.

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 33 ns

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 8 ns

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement