LET20030C

Mfr. #: LET20030C
Hersteller: STMicroelectronics
Beschreibung: RF MOSFET Transistors RF PWR Trans Ldmost Family
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: LET20030C Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
LET20030C Overview

Product belongs to the LET20030 series. Type: RF Power MOSFET Bulk is the packaging method for this product SMD/SMT Mounting-Style M243 Si is the technology used. The device offers a 13.9 dB of 26dB. Power-off control: 108 W Maximum operating temperature of + 200 C The operating frequency is 2 GHz. This product's 80 V. The ID of continuous drain current is 160 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 75 V. The transistor polarity is N-Channel.

LET20030C Image

LET20030C

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

LET20030C Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series LET20030
  • Type RF Power MOSFET
  • Packaging Bulk
  • Mounting-Style SMD/SMT
  • Package-Case M243
  • Technology Si
  • Gain 13.9 dB
  • Output-Power 45 W
  • Pd-Power-Dissipation 108 W
  • Maximum-Operating-Temperature + 200 C
  • Operating-Frequency 2 GHz
  • Vgs-Gate-Source-Voltage 80 V
  • Id-Continuous-Drain-Current 160 A
  • Vds-Drain-Source-Breakdown-Voltage 75 V
  • Transistor-Polarity N-Channel

LET20030C

LET20030C Specifications

LET20030C FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is LET20030.

  • A: At what frequency does the Type?

    Q: The product Type is RF Power MOSFET.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Bulk.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed M243

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Gain of the product?

    Q: The Gain of the product is 13.9 dB.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 108 W

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 200 C.

  • A: Is the cutoff frequency of the product Operating-Frequency?

    Q: Yes, the product's Operating-Frequency is indeed 2 GHz

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 80 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 160 A

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 75 V

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

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