LET20045C

LET20045C Overview

Product belongs to the LET20045 series. Type: RF Power MOSFET Bulk is the packaging method for this product SMD/SMT Mounting-Style M243 Si is the technology used. The device offers a 12.5 dB of 26dB. Power-off control: 130 W Maximum operating temperature of + 150 C The operating frequency is 2 GHz. This product's 15 V. The ID of continuous drain current is 12 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. The transistor polarity is N-Channel.

LET20045C Image

LET20045C Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series LET20045
• Type RF Power MOSFET
• Packaging Bulk
• Mounting-Style SMD/SMT
• Package-Case M243
• Technology Si
• Gain 12.5 dB
• Output-Power 65 W
• Pd-Power-Dissipation 130 W
• Maximum-Operating-Temperature + 150 C
• Operating-Frequency 2 GHz
• Vgs-Gate-Source-Voltage 15 V
• Id-Continuous-Drain-Current 12 A
• Vds-Drain-Source-Breakdown-Voltage 80 V
• Transistor-Polarity N-Channel

LET20045C FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed LET20045

• A: What is the Type of the product?

  Q: The Type of the product is RF Power MOSFET.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Bulk.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed M243

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: At what frequency does the Gain?

  Q: The product Gain is 12.5 dB.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 130 W

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: What is the Operating-Frequency of the product?

  Q: The Operating-Frequency of the product is 2 GHz.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 15 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 12 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 80 V.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel