LN100LA-G

Mfr. #: LN100LA-G
Hersteller: Microchip Technology
Beschreibung: MOSFET 2N-CH 1200V
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: LN100LA-G Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
LN100LA-G Overview

Product belongs to the LN100 series. Tape & Reel (TR) is the packaging method for this product SMD/SMT Mounting-Style 6-VFLGA Si is the technology used. Operational temperature range: -25°C ~ 125°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 6-LFGA (3x3) Configuration Dual This product uses an 2 N-Channel (Cascoded) FET-Type transistor. Transistor type: 2 N-Channel 1200V (1.2kV) This product has an 50pF @ 25V value of 300pF @ 25V. This product's Standard. - continuous drain-ID current at 25°C; This product has an 3000 Ohm @ 2mA, 2.8V of 12 Ohm @ 150mA, 0V. Power-off control: 350 mW Maximum operating temperature of + 125 C The ID of continuous drain current is 3 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. This product has a 1.6 V Vgs-th gate-source threshold voltage for efficient power management. The 3 kOhms for this product is 12 Ohms. The transistor polarity is N-Channel.

LN100LA-G Image

LN100LA-G

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

LN100LA-G Specifications
  • Manufacturer Microchip Technology
  • Product Category FETs - Arrays
  • Series LN100
  • Packaging Tape & Reel (TR)
  • Mounting-Style SMD/SMT
  • Package-Case 6-VFLGA
  • Technology Si
  • Operating-Temperature -25°C ~ 125°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 2 Channel
  • Supplier-Device-Package 6-LFGA (3x3)
  • Configuration Dual
  • FET-Type 2 N-Channel (Cascoded)
  • Power-Max 350mW
  • Transistor-Type 2 N-Channel
  • Drain-to-Source-Voltage-Vdss 1200V (1.2kV)
  • Input-Capacitance-Ciss-Vds 50pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C -
  • Rds-On-Max-Id-Vgs 3000 Ohm @ 2mA, 2.8V
  • Vgs-th-Max-Id 1.6V @ 10μA
  • Gate-Charge-Qg-Vgs -
  • Pd-Power-Dissipation 350 mW
  • Maximum-Operating-Temperature + 125 C
  • Id-Continuous-Drain-Current 3 mA
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.6 V
  • Rds-On-Drain-Source-Resistance 3 kOhms
  • Transistor-Polarity N-Channel

LN100LA-G

LN100LA-G Specifications

LN100LA-G FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is LN100.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tape & Reel (TR)

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed 6-VFLGA

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is -25°C ~ 125°C (TJ).

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 2 Channel.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is 6-LFGA (3x3).

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Dual.

  • A: At what frequency does the FET-Type?

    Q: The product FET-Type is 2 N-Channel (Cascoded).

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 2 N-Channel.

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 1200V (1.2kV)

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 50pF @ 25V.

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Standard

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is -.

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is 3000 Ohm @ 2mA, 2.8V.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 350 mW.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 125 C.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 3 mA

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 600 V

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 1.6 V

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 3 kOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

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