MAT01AHZ

Mfr. #: MAT01AHZ
Hersteller: Analog Devices Inc.
Beschreibung: Bipolar Transistors - BJT MATCHED MONO DUAL NPN
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: MAT01AHZ Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
MAT01AHZ Overview

Product belongs to the MAT01 series. Tray is the packaging method for this product Through Hole Mounting-Style TO-78-6 Metal Can Through Hole mounting type Supplier device package: TO-78-6 Configuration Dual Transistor type: 2 NPN (Dual) Matched Pair Maximum current collector Ic is 25mA . Maximum collector-emitter breakdown voltage of 45V DC current gain minimum (hFE) of Ic/Vce at -. Product Attribute: Vce-Saturation-Max-Ib-Ic: 800mV @ 1mA, 10mA Power-off control: 500 mW Maximum operating temperature of + 125 C Minimum operating temperature: - 55 C Rated VCEO up to 45 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 0.12 V The 45 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 25 mA Gain-Bandwidth-Product: 450 MHz This product is capable of handling a 25 mA continuous collector current. Minimum hfe for DC collector-base gain is 500. 840 of 605.

MAT01AHZ Image

MAT01AHZ

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MAT01AHZ Specifications
  • Manufacturer Analog Devices Inc.
  • Product Category Transistors (BJT) - Arrays
  • Series MAT01
  • Packaging Tray
  • Mounting-Style Through Hole
  • Package-Case TO-78-6 Metal Can
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-78-6
  • Configuration Dual
  • Power-Max 500mW
  • Transistor-Type 2 NPN (Dual) Matched Pair
  • Current-Collector-Ic-Max 25mA
  • Voltage-Collector-Emitter-Breakdown-Max 45V
  • DC-Current-Gain-hFE-Min-Ic-Vce -
  • Vce-Saturation-Max-Ib-Ic 800mV @ 1mA, 10mA
  • Current-Collector-Cutoff-Max 300nA
  • Frequency-Transition 450MHz
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 125 C
  • Minimum-Operating-Temperature - 55 C
  • Collector-Emitter-Voltage-VCEO-Max 45 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 0.12 V
  • Collector-Base-Voltage-VCBO 45 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 25 mA
  • Gain-Bandwidth-Product-fT 450 MHz
  • Continuous-Collector-Current 25 mA
  • DC-Collector-Base-Gain-hfe-Min 500
  • DC-Current-Gain-hFE-Max 840

MAT01AHZ

MAT01AHZ Specifications

MAT01AHZ FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed MAT01

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tray.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-78-6 Metal Can.

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Through Hole.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is TO-78-6.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Dual

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 2 NPN (Dual) Matched Pair

  • A: At what frequency does the Current-Collector-Ic-Max?

    Q: The product Current-Collector-Ic-Max is 25mA.

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 45V.

  • A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?

    Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is -.

  • A: At what frequency does the Vce-Saturation-Max-Ib-Ic?

    Q: The product Vce-Saturation-Max-Ib-Ic is 800mV @ 1mA, 10mA.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 500 mW.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 125 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 45 V.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is NPN.

  • A: At what frequency does the Collector-Emitter-Saturation-Voltage?

    Q: The product Collector-Emitter-Saturation-Voltage is 0.12 V.

  • A: What is the Collector-Base-Voltage-VCBO of the product?

    Q: The Collector-Base-Voltage-VCBO of the product is 45 V.

  • A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?

    Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 5 V

  • A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

    Q: Yes, the product's Maximum-DC-Collector-Current is indeed 25 mA

  • A: At what frequency does the Gain-Bandwidth-Product-fT?

    Q: The product Gain-Bandwidth-Product-fT is 450 MHz.

  • A: What is the Continuous-Collector-Current of the product?

    Q: The Continuous-Collector-Current of the product is 25 mA.

  • A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

    Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 500

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Max?

    Q: Yes, the product's DC-Current-Gain-hFE-Max is indeed 840

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