MAT01GHZ

Mfr. #: MAT01GHZ
Hersteller: Analog Devices Inc.
Beschreibung: Bipolar Transistors - BJT MATCHED MONO DUAL NPN
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: MAT01GHZ Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
MAT01GHZ Overview

Product belongs to the MAT01 series. Tube is the packaging method for this product Through Hole Mounting-Style TO-78-6 Metal Can Through Hole mounting type Supplier device package: TO-78-6 Configuration Dual Transistor type: 2 NPN (Dual) Matched Pair Maximum current collector Ic is 25mA . Maximum collector-emitter breakdown voltage of 45V DC current gain minimum (hFE) of Ic/Vce at -. Product Attribute: Vce-Saturation-Max-Ib-Ic: 800mV @ 1mA, 10mA Power-off control: 500 mW Maximum operating temperature of + 125 C Minimum operating temperature: - 55 C Rated VCEO up to 45 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 0.12 V The 45 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 25 mA Gain-Bandwidth-Product: 450 MHz This product is capable of handling a 25 mA continuous collector current. Minimum hfe for DC collector-base gain is 250. 610 of 605.

MAT01GHZ Image

MAT01GHZ

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MAT01GHZ Specifications
  • Manufacturer Analog Devices Inc.
  • Product Category Transistors (BJT) - Arrays
  • Series MAT01
  • Packaging Tube
  • Mounting-Style Through Hole
  • Package-Case TO-78-6 Metal Can
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-78-6
  • Configuration Dual
  • Power-Max 500mW
  • Transistor-Type 2 NPN (Dual) Matched Pair
  • Current-Collector-Ic-Max 25mA
  • Voltage-Collector-Emitter-Breakdown-Max 45V
  • DC-Current-Gain-hFE-Min-Ic-Vce -
  • Vce-Saturation-Max-Ib-Ic 800mV @ 1mA, 10mA
  • Current-Collector-Cutoff-Max 400nA
  • Frequency-Transition 450MHz
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 125 C
  • Minimum-Operating-Temperature - 55 C
  • Collector-Emitter-Voltage-VCEO-Max 45 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 0.12 V
  • Collector-Base-Voltage-VCBO 45 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 25 mA
  • Gain-Bandwidth-Product-fT 450 MHz
  • Continuous-Collector-Current 25 mA
  • DC-Collector-Base-Gain-hfe-Min 250
  • DC-Current-Gain-hFE-Max 610

MAT01GHZ

MAT01GHZ Specifications

MAT01GHZ FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is MAT01.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-78-6 Metal Can.

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is TO-78-6.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Dual

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 2 NPN (Dual) Matched Pair

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 25mA.

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 45V.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed -

  • A: What is the Vce-Saturation-Max-Ib-Ic of the product?

    Q: The Vce-Saturation-Max-Ib-Ic of the product is 800mV @ 1mA, 10mA.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 500 mW.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 125 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 45 V

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is NPN.

  • A: At what frequency does the Collector-Emitter-Saturation-Voltage?

    Q: The product Collector-Emitter-Saturation-Voltage is 0.12 V.

  • A: At what frequency does the Collector-Base-Voltage-VCBO?

    Q: The product Collector-Base-Voltage-VCBO is 45 V.

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 5 V.

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 25 mA.

  • A: At what frequency does the Gain-Bandwidth-Product-fT?

    Q: The product Gain-Bandwidth-Product-fT is 450 MHz.

  • A: What is the Continuous-Collector-Current of the product?

    Q: The Continuous-Collector-Current of the product is 25 mA.

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 250.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Max?

    Q: Yes, the product's DC-Current-Gain-hFE-Max is indeed 610

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