MAT03FHZ

Mfr. #: MAT03FHZ
Hersteller: Analog Devices Inc.
Beschreibung: Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: MAT03FHZ Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
MAT03FHZ Overview

Product belongs to the MAT03 series. Tube is the packaging method for this product Through Hole Mounting-Style TO-78-6 Metal Can Through Hole mounting type Supplier device package: TO-78-6 Configuration Dual Transistor type: 2 PNP (Dual) Maximum current collector Ic is 20mA . Maximum collector-emitter breakdown voltage of 36V DC current gain minimum (hFE) of Ic/Vce at -. Product Attribute: Vce-Saturation-Max-Ib-Ic: 100mV @ 100μA, 1mA Power-off control: 500 mW Maximum operating temperature of + 85 C Minimum operating temperature: - 40 C Rated VCEO up to 36 V The transistor polarity is PNP. Saturation voltage between collector and emitter is 0.025 V The 36 V voltage rating is 40 V. 36 V rating of 5 V Max DC collector current: 20 mA Gain-Bandwidth-Product: 190 MHz This product is capable of handling a 20 mA continuous collector current. Minimum hfe for DC collector-base gain is 40. 120 of 605.

MAT03FHZ Image

MAT03FHZ

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MAT03FHZ Specifications
  • Manufacturer Analog Devices Inc.
  • Product Category Transistors (BJT) - Arrays
  • Series MAT03
  • Packaging Tube
  • Mounting-Style Through Hole
  • Package-Case TO-78-6 Metal Can
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-78-6
  • Configuration Dual
  • Power-Max 500mW
  • Transistor-Type 2 PNP (Dual)
  • Current-Collector-Ic-Max 20mA
  • Voltage-Collector-Emitter-Breakdown-Max 36V
  • DC-Current-Gain-hFE-Min-Ic-Vce -
  • Vce-Saturation-Max-Ib-Ic 100mV @ 100μA, 1mA
  • Current-Collector-Cutoff-Max -
  • Frequency-Transition 190MHz
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 85 C
  • Minimum-Operating-Temperature - 40 C
  • Collector-Emitter-Voltage-VCEO-Max 36 V
  • Transistor-Polarity PNP
  • Collector-Emitter-Saturation-Voltage 0.025 V
  • Collector-Base-Voltage-VCBO 36 V
  • Emitter-Base-Voltage-VEBO 36 V
  • Maximum-DC-Collector-Current 20 mA
  • Gain-Bandwidth-Product-fT 190 MHz
  • Continuous-Collector-Current 20 mA
  • DC-Collector-Base-Gain-hfe-Min 40
  • DC-Current-Gain-hFE-Max 120

MAT03FHZ

MAT03FHZ Specifications

MAT03FHZ FAQ
  • A: At what frequency does the Series?

    Q: The product Series is MAT03.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-78-6 Metal Can.

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is TO-78-6.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Dual

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 2 PNP (Dual)

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 20mA.

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 36V.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed -

  • A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?

    Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 100mV @ 100μA, 1mA

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 500 mW

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 85 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 40 C

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 36 V

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed PNP

  • A: Is the cutoff frequency of the product Collector-Emitter-Saturation-Voltage?

    Q: Yes, the product's Collector-Emitter-Saturation-Voltage is indeed 0.025 V

  • A: What is the Collector-Base-Voltage-VCBO of the product?

    Q: The Collector-Base-Voltage-VCBO of the product is 36 V.

  • A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?

    Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 36 V

  • A: At what frequency does the Maximum-DC-Collector-Current?

    Q: The product Maximum-DC-Collector-Current is 20 mA.

  • A: At what frequency does the Gain-Bandwidth-Product-fT?

    Q: The product Gain-Bandwidth-Product-fT is 190 MHz.

  • A: At what frequency does the Continuous-Collector-Current?

    Q: The product Continuous-Collector-Current is 20 mA.

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 40.

  • A: At what frequency does the DC-Current-Gain-hFE-Max?

    Q: The product DC-Current-Gain-hFE-Max is 120.

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