| Mfr. #: | MD2001FX |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | Bipolar Transistors - BJT NPN Power Transisto |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | MD2001FX Datenblatt |
Product belongs to the 1000V Transistors series. Tube is the packaging method for this product Through Hole Mounting-Style ISOWATT218FX Through Hole mounting type Supplier device package: ISOWATT-218FX Configuration Single Transistor type: NPN Maximum current collector Ic is 12A . Maximum collector-emitter breakdown voltage of 700V DC current gain minimum (hFE) of Ic/Vce at 4.5 @ 6A, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.8V @ 1.5A, 6A Power-off control: 58 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 700 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 1.8 V The 9 V voltage rating is 40 V. 9 V rating of 5 V Max DC collector current: 18 A Gain-Bandwidth-Product: 64 kHz This product is capable of handling a 12 A continuous collector current. Minimum hfe for DC collector-base gain is 4.5. 7 of 605.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MD2001FX Specifications
A: What is the Series of the product?
Q: The Series of the product is 1000V Transistors.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: At what frequency does the Package-Case?
Q: The product Package-Case is ISOWATT218FX.
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is ISOWATT-218FX.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is NPN.
A: Is the cutoff frequency of the product Current-Collector-Ic-Max?
Q: Yes, the product's Current-Collector-Ic-Max is indeed 12A
A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?
Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 700V.
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 4.5 @ 6A, 5V.
A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?
Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 1.8V @ 1.5A, 6A
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 58 W
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 65 C.
A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?
Q: The product Collector-Emitter-Voltage-VCEO-Max is 700 V.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is NPN.
A: At what frequency does the Collector-Emitter-Saturation-Voltage?
Q: The product Collector-Emitter-Saturation-Voltage is 1.8 V.
A: What is the Collector-Base-Voltage-VCBO of the product?
Q: The Collector-Base-Voltage-VCBO of the product is 9 V.
A: At what frequency does the Emitter-Base-Voltage-VEBO?
Q: The product Emitter-Base-Voltage-VEBO is 9 V.
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 18 A.
A: What is the Gain-Bandwidth-Product-fT of the product?
Q: The Gain-Bandwidth-Product-fT of the product is 64 kHz.
A: Is the cutoff frequency of the product Continuous-Collector-Current?
Q: Yes, the product's Continuous-Collector-Current is indeed 12 A
A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?
Q: The product DC-Collector-Base-Gain-hfe-Min is 4.5.
A: What is the DC-Current-Gain-hFE-Max of the product?
Q: The DC-Current-Gain-hFE-Max of the product is 7.