| Mfr. #: | MJD122-1 |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | Darlington Transistors NPN PWR Darlington Int Anti Collecto |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | MJD122-1 Datenblatt |
Product belongs to the MJD122 series. Bulk is the packaging method for this product Through Hole Mounting-Style TO-251-3 Short Leads, IPak, TO-251AA Through Hole mounting type Supplier device package: TO-251-3 Configuration Single Transistor type: NPN - Darlington Maximum current collector Ic is 8A . Maximum collector-emitter breakdown voltage of 100V DC current gain minimum (hFE) of Ic/Vce at 1000 @ 4A, 4V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 4V @ 80mA, 8A Power-off control: 20 W Maximum operating temperature of + 150 C Rated VCEO up to 100 V The transistor polarity is NPN. The 100 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 5 A Minimum hfe for DC collector-base gain is 100. 10 uA Maximum Collector Cut-off Current;
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MJD122-1 Specifications
A: What is the Series of the product?
Q: The Series of the product is MJD122.
A: At what frequency does the Packaging?
Q: The product Packaging is Bulk.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-251-3 Short Leads, IPak, TO-251AA
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Through Hole
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed TO-251-3
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is NPN - Darlington.
A: Is the cutoff frequency of the product Current-Collector-Ic-Max?
Q: Yes, the product's Current-Collector-Ic-Max is indeed 8A
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 100V
A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?
Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 1000 @ 4A, 4V.
A: What is the Vce-Saturation-Max-Ib-Ic of the product?
Q: The Vce-Saturation-Max-Ib-Ic of the product is 4V @ 80mA, 8A.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 20 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?
Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 100 V
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is NPN.
A: At what frequency does the Collector-Base-Voltage-VCBO?
Q: The product Collector-Base-Voltage-VCBO is 100 V.
A: What is the Emitter-Base-Voltage-VEBO of the product?
Q: The Emitter-Base-Voltage-VEBO of the product is 5 V.
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 5 A.
A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?
Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 100
A: At what frequency does the Maximum-Collector-Cut-off-Current?
Q: The product Maximum-Collector-Cut-off-Current is 10 uA.