MJD3055T4

Mfr. #: MJD3055T4
Hersteller: STMicroelectronics
Beschreibung: TRANS NPN 60V 10A DPAK
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: MJD3055T4 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
MJD3055T4 Overview

Product belongs to the MJD3055 series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.063493 oz SMD/SMT Mounting-Style TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount mounting type Supplier device package: D-Pak Configuration Single Transistor type: NPN Maximum current collector Ic is 10A . Maximum collector-emitter breakdown voltage of 60V DC current gain minimum (hFE) of Ic/Vce at 20 @ 4A, 4V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 8V @ 3.3A, 10A Power-off control: 20 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 60 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 1.1 V The 70 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 10 A Gain-Bandwidth-Product: 2 MHz This product is capable of handling a 10 A continuous collector current. Minimum hfe for DC collector-base gain is 20. 100 of 605.

MJD3055T4 Image

MJD3055T4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MJD3055T4 Specifications
  • Manufacturer ON
  • Product Category Transistors (BJT) - Single
  • Series MJD3055
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.063493 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting-Type Surface Mount
  • Supplier-Device-Package D-Pak
  • Configuration Single
  • Power-Max 20W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 10A
  • Voltage-Collector-Emitter-Breakdown-Max 60V
  • DC-Current-Gain-hFE-Min-Ic-Vce 20 @ 4A, 4V
  • Vce-Saturation-Max-Ib-Ic 8V @ 3.3A, 10A
  • Current-Collector-Cutoff-Max 50μA
  • Frequency-Transition 2MHz
  • Pd-Power-Dissipation 20 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 60 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 1.1 V
  • Collector-Base-Voltage-VCBO 70 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 10 A
  • Gain-Bandwidth-Product-fT 2 MHz
  • Continuous-Collector-Current 10 A
  • DC-Collector-Base-Gain-hfe-Min 20
  • DC-Current-Gain-hFE-Max 100

MJD3055T4

MJD3055T4 Specifications

MJD3055T4 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed MJD3055

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Digi-ReelR Alternate Packaging.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.063493 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-252-3, DPak (2 Leads + Tab), SC-63.

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is D-Pak.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed NPN

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 10A

  • A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?

    Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 60V

  • A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 20 @ 4A, 4V.

  • A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?

    Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 8V @ 3.3A, 10A

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 20 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 65 C.

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 60 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: What is the Collector-Emitter-Saturation-Voltage of the product?

    Q: The Collector-Emitter-Saturation-Voltage of the product is 1.1 V.

  • A: What is the Collector-Base-Voltage-VCBO of the product?

    Q: The Collector-Base-Voltage-VCBO of the product is 70 V.

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 5 V.

  • A: At what frequency does the Maximum-DC-Collector-Current?

    Q: The product Maximum-DC-Collector-Current is 10 A.

  • A: Is the cutoff frequency of the product Gain-Bandwidth-Product-fT?

    Q: Yes, the product's Gain-Bandwidth-Product-fT is indeed 2 MHz

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 10 A

  • A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

    Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 20

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Max?

    Q: Yes, the product's DC-Current-Gain-hFE-Max is indeed 100

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