| Mfr. #: | MJD31CT4 |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | Bipolar Transistors - BJT NPN Gen Pur Switch |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | MJD31CT4 Datenblatt |


Product belongs to the MJD31CT4 series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.063493 oz SMD/SMT Mounting-Style TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount mounting type Supplier device package: D-Pak Configuration Single Transistor type: NPN Maximum current collector Ic is 3A . Maximum collector-emitter breakdown voltage of 100V DC current gain minimum (hFE) of Ic/Vce at 10 @ 3A, 4V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.2V @ 375mA, 3A Power-off control: 15 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 100 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 1.2 V The 100 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 3 A This product is capable of handling a 3 A continuous collector current. Minimum hfe for DC collector-base gain is 20.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MJD31CT4 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed MJD31CT4
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.063493 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-252-3, DPak (2 Leads + Tab), SC-63
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is D-Pak.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed NPN
A: Is the cutoff frequency of the product Current-Collector-Ic-Max?
Q: Yes, the product's Current-Collector-Ic-Max is indeed 3A
A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?
Q: The product Voltage-Collector-Emitter-Breakdown-Max is 100V.
A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?
Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 10 @ 3A, 4V.
A: At what frequency does the Vce-Saturation-Max-Ib-Ic?
Q: The product Vce-Saturation-Max-Ib-Ic is 1.2V @ 375mA, 3A.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 15 W
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 65 C.
A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?
Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 100 V
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is NPN.
A: At what frequency does the Collector-Emitter-Saturation-Voltage?
Q: The product Collector-Emitter-Saturation-Voltage is 1.2 V.
A: At what frequency does the Collector-Base-Voltage-VCBO?
Q: The product Collector-Base-Voltage-VCBO is 100 V.
A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?
Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 5 V
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 3 A.
A: Is the cutoff frequency of the product Continuous-Collector-Current?
Q: Yes, the product's Continuous-Collector-Current is indeed 3 A
A: What is the DC-Collector-Base-Gain-hfe-Min of the product?
Q: The DC-Collector-Base-Gain-hfe-Min of the product is 20.