PD57018TR-E

Mfr. #: PD57018TR-E
Hersteller: STMicroelectronics
Beschreibung: RF MOSFET Transistors POWER R.F.
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: PD57018TR-E Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
PD57018TR-E Overview

Product belongs to the PD57018-E series. Type: RF Power MOSFET Reel is the packaging method for this product SMD/SMT Mounting-Style PowerSO-10RF (Formed Lead) Si is the technology used. The device offers a 16.5 dB at 945 MHz of 26dB. Power-off control: 31.7 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 2.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 65 V. The 760 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.

PD57018TR-E Image

PD57018TR-E

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PD57018TR-E Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series PD57018-E
  • Type RF Power MOSFET
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Package-Case PowerSO-10RF (Formed Lead)
  • Technology Si
  • Gain 16.5 dB at 945 MHz
  • Output-Power 18 W
  • Pd-Power-Dissipation 31.7 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Operating-Frequency 1 GHz
  • Vgs-Gate-Source-Voltage +/- 20 V
  • Id-Continuous-Drain-Current 2.5 A
  • Vds-Drain-Source-Breakdown-Voltage 65 V
  • Rds-On-Drain-Source-Resistance 760 mOhms
  • Transistor-Polarity N-Channel

PD57018TR-E

PD57018TR-E Specifications

PD57018TR-E FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is PD57018-E.

  • A: What is the Type of the product?

    Q: The Type of the product is RF Power MOSFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed PowerSO-10RF (Formed Lead)

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: What is the Gain of the product?

    Q: The Gain of the product is 16.5 dB at 945 MHz.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 31.7 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

  • A: Is the cutoff frequency of the product Operating-Frequency?

    Q: Yes, the product's Operating-Frequency is indeed 1 GHz

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 20 V

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 2.5 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 65 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 760 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

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