| Mfr. #: | PD57030-E |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | PD57030-E Datenblatt |
Product belongs to the PD57030-E series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style PowerSO-10RF (Formed Lead) Si is the technology used. The device offers a 14 dB at 945 MHz of 26dB. Power-off control: 52.8 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 4 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 65 V. The transistor polarity is N-Channel.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
PD57030-E Specifications
A: What is the Series of the product?
Q: The Series of the product is PD57030-E.
A: Is the cutoff frequency of the product Type?
Q: Yes, the product's Type is indeed RF Power MOSFET
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: At what frequency does the Package-Case?
Q: The product Package-Case is PowerSO-10RF (Formed Lead).
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: At what frequency does the Gain?
Q: The product Gain is 14 dB at 945 MHz.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 52.8 W
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C
A: What is the Operating-Frequency of the product?
Q: The Operating-Frequency of the product is 1 GHz.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 20 V
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 4 A
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 65 V
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.