STB100N10F7

Mfr. #: STB100N10F7
Hersteller: STMicroelectronics
Beschreibung: Darlington Transistors MOSFET N-Ch 100V 0.0068 Ohm typ. 80A STripFET
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: STB100N10F7 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STB100N10F7 Overview

Product belongs to the N-channel STripFET series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 150 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 15 ns of 16 ns. This product has a 40 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 80 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 8 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 46 ns This product has a 27 ns. Qg-Gate-Charge is 61 nC.

STB100N10F7 Image

STB100N10F7

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STB100N10F7 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series N-channel STripFET
  • Packaging Reel
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 150 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 15 ns
  • Rise-Time 40 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 80 A
  • Vds-Drain-Source-Breakdown-Voltage 100 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4.5 V
  • Rds-On-Drain-Source-Resistance 8 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 46 ns
  • Typical-Turn-On-Delay-Time 27 ns
  • Qg-Gate-Charge 61 nC

STB100N10F7

STB100N10F7 Specifications

STB100N10F7 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is N-channel STripFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.139332 oz

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-252-3

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 150 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 175 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 15 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 40 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 80 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 100 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4.5 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 8 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 46 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 27 ns

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 61 nC.

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