STB45N50DM2AG

STB45N50DM2AG Overview

Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Power-off control: 250 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 9.8 ns of 16 ns. This product has a 9.4 ns of 16 ns. This product's +/- 25 V. The ID of continuous drain current is 35 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 500 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 84 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 73.5 ns This product has a 20 ns. Qg-Gate-Charge is 57 nC. This product operates in Enhancement channel mode for optimal performance.

STB45N50DM2AG Image

STB45N50DM2AG Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Unit-Weight 0.139332 oz
• Mounting-Style SMD/SMT
• Package-Case TO-252-3
• Technology Si
• Number-of-Channels 1 Channel
• Pd-Power-Dissipation 250 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 9.8 ns
• Rise-Time 9.4 ns
• Vgs-Gate-Source-Voltage +/- 25 V
• Id-Continuous-Drain-Current 35 A
• Vds-Drain-Source-Breakdown-Voltage 500 V
• Vgs-th-Gate-Source-Threshold-Voltage 4 V
• Rds-On-Drain-Source-Resistance 84 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 73.5 ns
• Typical-Turn-On-Delay-Time 20 ns
• Qg-Gate-Charge 57 nC
• Channel-Mode Enhancement

STB45N50DM2AG FAQ

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.139332 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is SMD/SMT.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-252-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 250 W

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 9.8 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 9.4 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is +/- 25 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 35 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 500 V.

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 84 mOhms

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 73.5 ns.

• A: At what frequency does the Typical-Turn-On-Delay-Time?

  Q: The product Typical-Turn-On-Delay-Time is 20 ns.

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 57 nC.

• A: At what frequency does the Channel-Mode?

  Q: The product Channel-Mode is Enhancement.