STD11NM50N

Mfr. #: STD11NM50N
Hersteller: STMicroelectronics
Beschreibung: MOSFET N-CH 500V 9A DPAK
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: STD11NM50N Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STD11NM50N Overview

Product belongs to the N-channel MDmesh series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 70 W Maximum operating temperature of + 150 C This product has a 10 ns of 16 ns. This product has a 10 ns of 16 ns. This product's +/- 25 V. The ID of continuous drain current is 8.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 500 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 470 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 33 ns This product has a 8 ns. Qg-Gate-Charge is 19 nC.

STD11NM50N Image

STD11NM50N

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STD11NM50N Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series N-channel MDmesh
  • Packaging Reel
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 70 W
  • Maximum-Operating-Temperature + 150 C
  • Fall-Time 10 ns
  • Rise-Time 10 ns
  • Vgs-Gate-Source-Voltage +/- 25 V
  • Id-Continuous-Drain-Current 8.5 A
  • Vds-Drain-Source-Breakdown-Voltage 500 V
  • Vgs-th-Gate-Source-Threshold-Voltage 3 V
  • Rds-On-Drain-Source-Resistance 470 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 33 ns
  • Typical-Turn-On-Delay-Time 8 ns
  • Qg-Gate-Charge 19 nC

STD11NM50N

STD11NM50N Specifications

STD11NM50N FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is N-channel MDmesh.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.139332 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-252-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 70 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 10 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 10 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is +/- 25 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 8.5 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 500 V

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 3 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 470 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 33 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 8 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 19 nC

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