STD16N50M2

Mfr. #: STD16N50M2
Hersteller: STMicroelectronics
Beschreibung: MOSFET N-CH 500V 13A DPAK
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: STD16N50M2 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STD16N50M2 Overview

Product belongs to the MDmesh M2 series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 110 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 10 ns of 16 ns. This product has a 7.6 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 13 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 550 V. This product has a 2 V Vgs-th gate-source threshold voltage for efficient power management. The 240 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 32 ns This product has a 9.6 ns. Qg-Gate-Charge is 19.5 nC. This product operates in Enhancement channel mode for optimal performance.

STD16N50M2 Image

STD16N50M2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STD16N50M2 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh M2
  • Packaging Reel
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 110 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 10 ns
  • Rise-Time 7.6 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 13 A
  • Vds-Drain-Source-Breakdown-Voltage 550 V
  • Vgs-th-Gate-Source-Threshold-Voltage 2 V
  • Rds-On-Drain-Source-Resistance 240 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 32 ns
  • Typical-Turn-On-Delay-Time 9.6 ns
  • Qg-Gate-Charge 19.5 nC
  • Channel-Mode Enhancement

STD16N50M2

STD16N50M2 Specifications

STD16N50M2 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is MDmesh M2.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Reel

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.139332 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-252-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 110 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 10 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 7.6 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 25 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 13 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 550 V

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 2 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 240 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 32 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 9.6 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 19.5 nC.

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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