| Mfr. #: | STD25N10F7 |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | MOSFET N-CH 100V 25A DPAK |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | STD25N10F7 Datenblatt |
Product belongs to the N-channel STripFET series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 40 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 4.6 ns of 16 ns. This product has a 14 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 25 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 35 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 14.8 ns This product has a 9.8 ns. Qg-Gate-Charge is 14 nC.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STD25N10F7 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed N-channel STripFET
A: What is the Packaging of the product?
Q: The Packaging of the product is Reel.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.139332 oz
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-252-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 40 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 175 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 4.6 ns.
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 14 ns.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 20 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 25 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 100 V.
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4.5 V
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 35 mOhms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 14.8 ns
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 9.8 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 14 nC