STE88N65M5

STE88N65M5 Overview

Product belongs to the MDmesh M5 series. Tube is the packaging method for this product Weight of 1 oz SMD/SMT Mounting-Style ISOTOP-4 Si is the technology used. Number of channels: 1 Channel Configuration Single Power-off control: 494 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 29 ns of 16 ns. This product has a 16 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 88 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 24 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 204 nC. This product operates in Enhancement channel mode for optimal performance.

STE88N65M5 Image

STE88N65M5 Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series MDmesh M5
• Packaging Tube
• Unit-Weight 1 oz
• Mounting-Style SMD/SMT
• Package-Case ISOTOP-4
• Technology Si
• Number-of-Channels 1 Channel
• Configuration Single
• Pd-Power-Dissipation 494 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 29 ns
• Rise-Time 16 ns
• Vgs-Gate-Source-Voltage 25 V
• Id-Continuous-Drain-Current 88 A
• Vds-Drain-Source-Breakdown-Voltage 650 V
• Vgs-th-Gate-Source-Threshold-Voltage 3 V
• Rds-On-Drain-Source-Resistance 24 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 204 nC
• Channel-Mode Enhancement

STE88N65M5 FAQ

• A: At what frequency does the Series?

  Q: The product Series is MDmesh M5.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 1 oz

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed SMD/SMT

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is ISOTOP-4.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 494 W

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 29 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 16 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 25 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 88 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 24 mOhms

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 204 nC.

• A: At what frequency does the Channel-Mode?

  Q: The product Channel-Mode is Enhancement.