| Mfr. #: | STF10LN80K5 |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | MOSFET N-CH 800V 8A TO-220FP |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | STF10LN80K5 Datenblatt |
RoHS compliant with Details Input bias current of Through Hole Package type is IPAK-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 800 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 5 A; The Rds On - Drain-Source Resistance of the product is 1.15 Ohms. The Vgs - Gate-Source Voltage attribute for this product is +/- 30 V. The 3 V Gate-Source Threshold Voltage of Vgs th; 12 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Enhancement Channel Mode Configuration 1 N-Channel Fall Time of 17.4 ns - 55 C minimum operating temperature The power dissipation is 85 W. 6.7 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 23.6 ns; The 9.3 ns typical turn-on delay time
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STF10LN80K5 Specifications
A: What is the RoHS of the product?
Q: The RoHS of the product is Details.
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is Through Hole.
A: At what frequency does the Package / Case?
Q: The product Package / Case is IPAK-3.
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: Is the cutoff frequency of the product Transistor Polarity?
Q: Yes, the product's Transistor Polarity is indeed N-Channel
A: At what frequency does the Vds - Drain-Source Breakdown Voltage?
Q: The product Vds - Drain-Source Breakdown Voltage is 800 V.
A: At what frequency does the Id - Continuous Drain Current?
Q: The product Id - Continuous Drain Current is 5 A.
A: At what frequency does the Rds On - Drain-Source Resistance?
Q: The product Rds On - Drain-Source Resistance is 1.15 Ohms.
A: What is the Vgs - Gate-Source Voltage of the product?
Q: The Vgs - Gate-Source Voltage of the product is +/- 30 V.
A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?
Q: The product Vgs th - Gate-Source Threshold Voltage is 3 V.
A: What is the Qg - Gate Charge of the product?
Q: The Qg - Gate Charge of the product is 12 nC.
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: At what frequency does the Channel Mode?
Q: The product Channel Mode is Enhancement.
A: At what frequency does the Configuration?
Q: The product Configuration is 1 N-Channel.
A: What is the Fall Time of the product?
Q: The Fall Time of the product is 17.4 ns.
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 55 C.
A: At what frequency does the Pd - Power Dissipation?
Q: The product Pd - Power Dissipation is 85 W.
A: At what frequency does the Rise Time?
Q: The product Rise Time is 6.7 ns.
A: What is the Transistor Type of the product?
Q: The Transistor Type of the product is 1 N-Channel.
A: At what frequency does the Typical Turn-Off Delay Time?
Q: The product Typical Turn-Off Delay Time is 23.6 ns.
A: At what frequency does the Typical Turn-On Delay Time?
Q: The product Typical Turn-On Delay Time is 9.3 ns.