STF140N8F7

Mfr. #: STF140N8F7
Hersteller: STMicroelectronics
Beschreibung: Darlington Transistors MOSFET Nchanl 80 V 0035 Ohm typ 64 A Pwr MOSFET
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: STF140N8F7 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STF140N8F7 Overview

Product belongs to the N-channel STripFET series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 35 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 44 ns of 16 ns. This product has a 51 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 64 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. This product has a 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 4.3 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 82 ns This product has a 26 ns. Qg-Gate-Charge is 96 nC.

STF140N8F7 Image

STF140N8F7

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STF140N8F7 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series N-channel STripFET
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 35 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 44 ns
  • Rise-Time 51 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 64 A
  • Vds-Drain-Source-Breakdown-Voltage 80 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4.5 V
  • Rds-On-Drain-Source-Resistance 4.3 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 82 ns
  • Typical-Turn-On-Delay-Time 26 ns
  • Qg-Gate-Charge 96 nC

STF140N8F7

STF140N8F7 Specifications

STF140N8F7 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is N-channel STripFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.011640 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 35 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 175 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 44 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 51 ns

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 20 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 64 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 80 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4.5 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 4.3 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 82 ns

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 26 ns

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 96 nC

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