| Mfr. #: | STF18NM60N |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | MOSFET N-CH 600V 13A TO-220FP |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | STF18NM60N Datenblatt |


Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 30 W This product has a 40 ns of 16 ns. This product has a 22 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 13 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 260 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 50 ns This product has a 20 ns. Qg-Gate-Charge is 35 nC.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STF18NM60N Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed N-channel MDmesh
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.011640 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-220-3
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 30 W.
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 40 ns.
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 22 ns
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 25 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 13 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 260 mOhms.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 50 ns
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 20 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 35 nC.