STF23NM50N

Mfr. #: STF23NM50N
Hersteller: STMicroelectronics
Beschreibung: MOSFET N-CH 500V 17A TO-220FP
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: STF23NM50N Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STF23NM50N Overview

Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 30 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 29 ns of 16 ns. This product has a 19 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 17 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 500 V. The 190 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 71 ns This product has a 6.6 ns. Qg-Gate-Charge is 45 nC. This product operates in Enhancement channel mode for optimal performance.

STF23NM50N Image

STF23NM50N

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STF23NM50N Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series N-channel MDmesh
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 30 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 29 ns
  • Rise-Time 19 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 17 A
  • Vds-Drain-Source-Breakdown-Voltage 500 V
  • Rds-On-Drain-Source-Resistance 190 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 71 ns
  • Typical-Turn-On-Delay-Time 6.6 ns
  • Qg-Gate-Charge 45 nC
  • Channel-Mode Enhancement

STF23NM50N

STF23NM50N Specifications

STF23NM50N FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed N-channel MDmesh

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 30 W

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 29 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 19 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 17 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 500 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 190 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 71 ns.

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 6.6 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 45 nC.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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