| Mfr. #: | STF24N65M2 |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | IGBT Transistors MOSFET POWER MOSFET |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | STF24N65M2 Datenblatt |


Product belongs to the MDmesh M2 series. Tube is the packaging method for this product Weight of 0.081130 oz Through Hole Mounting-Style TO-220FP-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Power-off control: 30 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 25.5 ns of 16 ns. This product has a 9.5 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 16 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 2 V Vgs-th gate-source threshold voltage for efficient power management. The 185 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 68 ns This product has a 10 ns. Qg-Gate-Charge is 29 nC. This product operates in Enhancement channel mode for optimal performance.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STF24N65M2 Specifications
A: At what frequency does the Series?
Q: The product Series is MDmesh M2.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.081130 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-220FP-3
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 30 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 25.5 ns.
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 9.5 ns.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 16 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 650 V.
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 2 V
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 185 mOhms
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 68 ns.
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 10 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 29 nC
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.