STF26NM60N-H

STF26NM60N-H Overview

Product belongs to the STF26NM60N-H series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 30 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 50 ns of 16 ns. This product has a 25 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 20 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 135 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 85 ns This product has a 13 ns. Qg-Gate-Charge is 60 nC.

STF26NM60N-H Image

STF26NM60N-H Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series STF26NM60N-H
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Number-of-Channels 1 Channel
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 30 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 50 ns
• Rise-Time 25 ns
• Vgs-Gate-Source-Voltage 25 V
• Id-Continuous-Drain-Current 20 A
• Vds-Drain-Source-Breakdown-Voltage 600 V
• Rds-On-Drain-Source-Resistance 135 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 85 ns
• Typical-Turn-On-Delay-Time 13 ns
• Qg-Gate-Charge 60 nC

STF26NM60N-H FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed STF26NM60N-H

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.011640 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-220-3

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 30 W

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 50 ns.

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 25 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 25 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 20 A.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 600 V.

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 135 mOhms.

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 85 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 13 ns.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 60 nC