STF8N80K5

Mfr. #: STF8N80K5
Hersteller: STMicroelectronics
Beschreibung: MOSFET N-CH 800V 6A TO220FP
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: STF8N80K5 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STF8N80K5 Overview

Product belongs to the MDmesh K5 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 25 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 20 ns of 16 ns. This product has a 14 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 6 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 800 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 950 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 32 ns This product has a 12 ns. Qg-Gate-Charge is 16.5 nC. This product operates in Enhancement channel mode for optimal performance.

STF8N80K5 Image

STF8N80K5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STF8N80K5 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series MDmesh K5
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 25 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 20 ns
  • Rise-Time 14 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 6 A
  • Vds-Drain-Source-Breakdown-Voltage 800 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 950 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 32 ns
  • Typical-Turn-On-Delay-Time 12 ns
  • Qg-Gate-Charge 16.5 nC
  • Channel-Mode Enhancement

STF8N80K5

STF8N80K5 Specifications

STF8N80K5 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed MDmesh K5

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 25 W

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 20 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 14 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 6 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 800 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4 V

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 950 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 32 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 12 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 16.5 nC.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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