| Mfr. #: | STFI20NK50Z |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | MOSFET N-CH 500V 17A I2PAK FP |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | STFI20NK50Z Datenblatt |


Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Through Hole Mounting-Style I2PAKFP-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 40 W Maximum operating temperature of + 150 C This product's 30 V. The ID of continuous drain current is 17 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 500 V. The 270 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 85 nC.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STFI20NK50Z Specifications
A: What is the Series of the product?
Q: The Series of the product is N-channel MDmesh.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is I2PAKFP-3.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 1 N-Channel
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 40 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 30 V.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 17 A
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 500 V
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 270 mOhms.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 85 nC.