| Mfr. #: | STH185N10F3-2 |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | IGBT Transistors MOSFET POWER MOSFET |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | STH185N10F3-2 Datenblatt |
Product belongs to the N-channel STripFET series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Power-off control: 315 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 6.9 ns of 16 ns. This product has a 97.1 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 180 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 2 V Vgs-th gate-source threshold voltage for efficient power management. The 4.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 99.9 ns This product has a 25.6 ns. Qg-Gate-Charge is 114.6 nC. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STH185N10F3-2 Specifications
A: What is the Series of the product?
Q: The Series of the product is N-channel STripFET.
A: At what frequency does the Packaging?
Q: The product Packaging is Reel.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.139332 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-252-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 315 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 175 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 6.9 ns.
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 97.1 ns.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 20 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 180 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 100 V
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 2 V.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 4.5 mOhms.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: What is the Typical-Turn-Off-Delay-Time of the product?
Q: The Typical-Turn-Off-Delay-Time of the product is 99.9 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 25.6 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 114.6 nC
A: At what frequency does the Channel-Mode?
Q: The product Channel-Mode is Enhancement.