STH210N75F6-2

Mfr. #: STH210N75F6-2
Hersteller: STMicroelectronics
Beschreibung: IGBT Transistors MOSFET N-ch 75V 0.0022 Ohm 180A STripFET VI
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: STH210N75F6-2 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STH210N75F6-2 Overview

Product belongs to the STH210N75F6-2 series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 300 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product's 20 V. The ID of continuous drain current is 180 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 75 V. The 2.8 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 171 nC.

STH210N75F6-2 Image

STH210N75F6-2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STH210N75F6-2 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series STH210N75F6-2
  • Packaging Reel
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 300 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 180 A
  • Vds-Drain-Source-Breakdown-Voltage 75 V
  • Rds-On-Drain-Source-Resistance 2.8 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 171 nC

STH210N75F6-2

STH210N75F6-2 Specifications

STH210N75F6-2 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed STH210N75F6-2

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.139332 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-252-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 300 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 175 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 180 A

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 75 V

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 2.8 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 171 nC.

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